IEEE International Semiconductor Laser Conference

IEEE International Semiconductor Laser Conference

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High Power 660-nm Laser Diodes for Recordable Dual Layer DVD K. Shibata, Y. Yoshida, M. Sasaki, K. Ono, J. Horie, T. Yagi and T. Nishimura High Frequency aamp; Optical Device Works, Mitsubishi Electric Corporation 4-1 Mizuhara, Itami, ... Figure 1 shows the schematic drawing and the schematic band diagram of the LD. It has a double-channel type waveguide structure and a window-mirror- structure by intermixing the MQW active layer to avoid catastrophic optical damage at facets.


Title:IEEE International Semiconductor Laser Conference
Author:
Publisher: - 2004
ISBN-13:

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